Investigation of ITO magnetron deposition effect on carrier lifetime degradation in silicon wafer

The effect of ITO magnetron deposition on carrier lifetime in silicon was demonstrated. The method of 2D photoluminescence decay time measurements revealed the lifetime degradation in silicon after magnetron deposition of thin ITO film which is used for top contact in modern solar cells.

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-12, Vol.1410 (1), p.12110
Main Authors: Kudryashov, D, Baranov, A, Gudovskikh, A
Format: Article
Language:English
Subjects:
Carrier lifetime
Degradation
Deposition
Photoluminescence
Photovoltaic cells
Physics
Silicon
Silicon wafers
Solar cells
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Description
Summary:The effect of ITO magnetron deposition on carrier lifetime in silicon was demonstrated. The method of 2D photoluminescence decay time measurements revealed the lifetime degradation in silicon after magnetron deposition of thin ITO film which is used for top contact in modern solar cells.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1410/1/012110