Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing

In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the...

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-12, Vol.1410 (1), p.12017
Main Authors: Lukyanenko, A V, Tarasov, A S, Shanidze, L V, Yakovlev, I A, Zelenov, F V, Masugin, A N, Ivanov, A B, Baron, F A, Volkov, N V
Format: Article
Language:English
Subjects:
Annealing
CMOS
Field effect transistors
Heusler alloys
Nanowires
Physics
Semiconductor devices
Silicon substrates
SOI (semiconductors)
Thin films
Transport properties
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Summary:In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1410/1/012017