Model for nucleation of catalyst-free III-V nanowires on patterned substrates

Catalyst-free growth of III-V nanowires enables different optoelectronic applications though usually requires substrate patterning to control the size and position of nanowires. However, the impact of substrate modification on the nanowire nucleation is not well-understood yet. The theoretical appro...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-03, Vol.1482 (1), p.12030
Main Authors: Berdnikov, Y, Sokolovskii, A S, Sibirev, N V
Format: Article
Language:English
Subjects:
Adatoms
Catalysts
Diffusion rate
Nanowires
Nucleation
Optoelectronics
Physics
Substrates
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Summary:Catalyst-free growth of III-V nanowires enables different optoelectronic applications though usually requires substrate patterning to control the size and position of nanowires. However, the impact of substrate modification on the nanowire nucleation is not well-understood yet. The theoretical approach of this work studies the effect of substrate boundaries and adatom diffusion on the nucleation rate of catalyst-free III-V NWs on substrates with circularly symmetric patterning. In the model results, we distinguish and demonstrate four different scenarios of nanowire nucleation, depending on the properties of the patterned and unpatterned surfaces.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1482/1/012030