Fabrication of transparent lateral CoSi2/TiSi2 contact junctions

We demonstrate two-step electron-beam lithographic fabrication of transparent disilicide superconductor/normal-metal CoSi2/TiSi2 contact junctions, where CoSi2 is a superconductor (S) with a transition temperature T c ≈ 1.5 K, and TiSi2 is a normal-metal (N). The lateral S/N contact junction is embe...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-08, Vol.60 (8)
Main Authors: Chiu, Shao-Pin, Lai, Wen-Long, Lin, Juhn-Jong
Format: Article
Language:English
Subjects:
Circuits
Cobalt silicide
conductance spectrum
CoSi
disilicides
Electron beams
Heterostructures
Silicon substrates
Superconducting devices
superconductor/normal metal contact junctions
TiSi
Transition temperature
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Summary:We demonstrate two-step electron-beam lithographic fabrication of transparent disilicide superconductor/normal-metal CoSi2/TiSi2 contact junctions, where CoSi2 is a superconductor (S) with a transition temperature T c ≈ 1.5 K, and TiSi2 is a normal-metal (N). The lateral S/N contact junction is embedded in a silicon substrate. The fabrication processes are compatible with the state-of-the-art silicon-based integrated-circuit technology. We show potential advantages of these junctions over conventional (tunnel) junctions where S and N are vertically stacked on a substrate. We propose that epitaxial CoSi2/Si heterostructures may be used as a basis in superconducting devices and qubits.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac1693