Valley-related multiple Hall effect in monolayer VSi2P4

Two-dimensional materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing for exploring novel phenomena and applications, but have been largely overlooked to date. Here, using first-principles calculations, we show that the valley-related multiple...

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Bibliographic Details
Published in:Physical review. B 2021-08, Vol.104 (7)
Main Authors: Zheng, Yue, Chen, Wei, Xing, D Y
Format: Article
Language:English
Subjects:
Broken symmetry
Electromagnetism
Ferromagnetism
First principles
Gamma rays
Magnetism
Quantum Hall effect
Two dimensional materials
Valleys
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Summary:Two-dimensional materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing for exploring novel phenomena and applications, but have been largely overlooked to date. Here, using first-principles calculations, we show that the valley-related multiple Hall effect can exist in single-layer VSi2P4. We identify single-layer VSi2P4 as a ferromagnetic semiconductor with out of plane magnetization and valley physics. Arising from the joint effect of inversion symmetry breaking and time-reversal symmetry breaking, the exotic spontaneous valley polarization occurs in single-layer VSi2P4, thus facilitating the observation of anomalous valley Hall effect. Moreover, under external strain, band inversion can occur at only one of the valleys of single-layer VSi2P4, enabling the long-sought valley-polarized quantum anomalous Hall effect, and meanwhile the anomalous valley Hall effect is well preserved. Our work not only enriches the research on valley-related multiple Hall effect, but also provides an ideal platform for exploring valley-polarized quantum anomalous Hall effect.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.104.075421