Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells

Mid-infrared intersubband transitions in strain-balanced m-plane (In)Al x Ga 1-x N/In 0.16 Ga 0.84 N (0.19≤x≤0.3) multi-quantum wells are reported for the first time in the range of 3.4–5.1 µm (244–360 meV). Direct and attenuated total-reflection infrared absorption measurements are interpreted usin...

Full description

Saved in:
Bibliographic Details
Published in:Optical materials express 2021-09, Vol.11 (9), p.3284
Main Authors: Nguyen, Trang, Dzuba, Brandon, Cao, Yang, Senichev, Alexander, Diaz, Rosa E., Manfra, Michael J., Malis, Oana
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Approximation
Charge density
Hartree approximation
Infrared absorption
Infrared reflection
Intersubband transitions
Mathematical analysis
Multi Quantum Wells
Quantum wells
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Mid-infrared intersubband transitions in strain-balanced m-plane (In)Al x Ga 1-x N/In 0.16 Ga 0.84 N (0.19≤x≤0.3) multi-quantum wells are reported for the first time in the range of 3.4–5.1 µm (244–360 meV). Direct and attenuated total-reflection infrared absorption measurements are interpreted using structural information revealed by high-resolution x-ray diffraction and transmission electron microanalysis. The experimental intersubband energies are better reproduced by calculations using the local-density approximation than the Hartree-Fock approximation for the exchange-correlation correction. The effect of charge density, quantum well width, and barrier alloy composition on the intersubband transition energy is also investigated to evaluate the potential of this material for practical device applications.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.434866