Investigating the effect of silicon surface chemical treatment on Al/Si contact properties in GaP/Si solar cells

In the present work, experimental studies have been carried out to reveal how chemical treatment of a silicon surface affects the properties of the Al/Si contact. It has been shown that for p-type monocrystalline silicon substrates with a resistivity of 10 ohm cm, it is possible to form an ohmic Al/...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2018-03, Vol.993 (1), p.12030
Main Authors: Kudryashov, D, Gudovskikh, A
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Chemical treatment
Magnetron sputtering
Photovoltaic cells
Physics
Silicon
Silicon substrates
Solar cells
Thin films
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the present work, experimental studies have been carried out to reveal how chemical treatment of a silicon surface affects the properties of the Al/Si contact. It has been shown that for p-type monocrystalline silicon substrates with a resistivity of 10 ohm cm, it is possible to form an ohmic Al/Si contact by magnetron sputtering of an aluminum thin film and its further annealing at temperatures of 400 - 450 °C. In the range of annealing temperatures of 250 - 400 °C, the Si substrate treatment in the HF solution leads to a significant increase in currents on the current-voltage curves of the Al/Si contact, while in the range of 450 - 700 °C, the effect of chemical treatment of the silicon is not detected.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/993/1/012030