In situ reflection electron microscopy for investigation of surface processes on Bi2Se3(0001)
The sublimation and van der Waals (vdW) epitaxy on Bi 2 Se 3 (0001) surface have been first visualized using in situ reflection electron microscopy. When Bi 2 Se 3 (0001) surface was exposed to a Se molecular beam (up to 0.1 nm/s) and heated to ∼400°C, we observed ascending motion of atomic steps co...
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Published in: | Journal of physics. Conference series 2021-07, Vol.1984 (1), p.12016 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The sublimation and van der Waals (vdW) epitaxy on Bi
2
Se
3
(0001) surface have been first visualized using
in situ
reflection electron microscopy. When Bi
2
Se
3
(0001) surface was exposed to a Se molecular beam (up to 0.1 nm/s) and heated to ∼400°C, we observed ascending motion of atomic steps corresponding to congruent Bi
2
Se
3
sublimation. During the sublimation, grooves made by probe lithography act as sources of atomic steps: groove depth increases and generates atomic steps that move in the ascending direction away from the source. We used this phenomenon to create self-organized regularly-spaced zigzag atomic steps having 1 nm height on the Bi
2
Se
3
(0001) surface. The deposition of Bi (up to ∼0.01 nm/s) onto the Bi
2
Se
3
(0001) surface at constant Se flux (up to ∼0.1 nm/s) reversed the direction of the step flow, and vdW epitaxy was observed. The deposition of In and Se onto the Bi
2
Se
3
(0001) surface at ∼400°C led to the epitaxial growth of layered In
2
Se
3
. This vdW heteroepitaxy started with 2D island nucleation and, after 3–5 nm growth, continued with a screw-dislocation-driven formation of 3D islands.
Ex situ
Raman scattering measurements have shown that the grown 20-nm-thick In
2
Se
3
film exhibits vibrational modes that originate from the β-In
2
Se
3
crystal phase. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/1984/1/012016 |