Carrier lifetime in InAs(Ga,Sb,P) heterostructures

Carrier lifetime limited by radiative and most probable non-radiative recombination processes was calculated for InAs(Ga,Sb,P) heterostructures under injection. At low temperatures (T

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Published in:Journal of physics. Conference series 2018-06, Vol.1038 (1), p.12097
Main Authors: Semakova, A A, Bazhenov, N L, Mynbaev, K D
Format: Article
Language:English
Subjects:
Augers
Carrier lifetime
Heterostructures
Holes (electron deficiencies)
Low temperature
Physics
Radiative recombination
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Bazhenov, N L
Mynbaev, K D
description Carrier lifetime limited by radiative and most probable non-radiative recombination processes was calculated for InAs(Ga,Sb,P) heterostructures under injection. At low temperatures (T
doi_str_mv 10.1088/1742-6596/1038/1/012097
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subjects Augers
Carrier lifetime
Heterostructures
Holes (electron deficiencies)
Low temperature
Physics
Radiative recombination
title Carrier lifetime in InAs(Ga,Sb,P) heterostructures
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