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Synthesis of silicon nanowire and crystalline carbon quantum dots heterostructure and study of photo response and photoluminescence property

[Display omitted] •Metal assisted chemical etching route to synthesize vertically aligned silicon nanowires (SiNWs) and CQD heterostructure.•The enhancement in current under light illumination occurs in SiNW/CQD heterostructure.•photoluminescence property of the n-SiNW-CQD hybrid. Silicon nanowire b...

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Published in:Materials letters 2021-11, Vol.303, p.130493, Article 130493
Main Authors: Sarkar, Sourav, Ray, Unmesha, Roy, Dipayan, Banerjee, Diptonil, Chattopadhyay, Kalyan Kumar
Format: Article
Language:English
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Summary:[Display omitted] •Metal assisted chemical etching route to synthesize vertically aligned silicon nanowires (SiNWs) and CQD heterostructure.•The enhancement in current under light illumination occurs in SiNW/CQD heterostructure.•photoluminescence property of the n-SiNW-CQD hybrid. Silicon nanowire based heterostrucure or nanocomposites becomes intrigued in next generation energy conversion devices. Herein, we have prepared n type silicon nanowires (n-SiNWs) and water soluble Carbon Quantum Dots (CQD) through metal assisted etching and hydrothermal method respectively. The CQD possesses very low dimensions around 2–4 nm which becomes spin coated on n type silicon nanowires. The formation of silicon nanowires/ Carbon Quantum Dots heterostructures (n-SiNW/CQD) exhibits excellent photo current properties with Ilight/IDark had apparent value within the range 1.36–3.83. The heterostructure also exhibits a strong photoluminescence spectrum in blue region.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2021.130493