Photoluminescence and infrared spectroscopy studies of thin Ge1-x Sn x heterostructures

Elastically strained metastable GeSn layers with mole fraction of tin up to 0.15 was grown on (001) Si substrates with different misorientation. Photoluminescence spectra (PL) at room temperature and infrared (IR) spectroscopy spectra at helium temperature were measured. The direct edge of intrinsic...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-03, Vol.816 (1)
Main Authors: Krivobok, V S, Aleshchenko, Yu A, Martovitsky, V M, Klekovkin, A V, Bazalevsky, M A, Mehiya, A B
Format: Article
Language:English
Subjects:
Heterostructures
Infrared spectra
Infrared spectroscopy
Misalignment
Photoluminescence
Physics
Room temperature
Silicon substrates
Spectrum analysis
Tin
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Summary:Elastically strained metastable GeSn layers with mole fraction of tin up to 0.15 was grown on (001) Si substrates with different misorientation. Photoluminescence spectra (PL) at room temperature and infrared (IR) spectroscopy spectra at helium temperature were measured. The direct edge of intrinsic absorption in the region of 0.71-0.72 eV was observed in grown structures with a tin content of about 12-13%.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/816/1/012021