Hydrothermal synthesis and characterization of the semiconductor material Cu2ZnTiS4

• Published in: Journal of physics. Conference series 2017-12, Vol.935 (1)
• Main Authors: Bustos, H G Pérez, Patarroyo-Mesa, M, Gómez-Cuaspud, J A, Pineda-Triana, Y, Vera-López, E
• Format: Article
• Language: English
• Subjects: Chemical synthesis; Composition; Electrical resistivity; Hydrothermal crystal growth; Physics; Semiconductor materials; Spectroscopic analysis; Spectrum analysis
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/935/1/012065

This paper describes the results of the synthesis and characterization of a quaternary semiconductor based on Cu2ZnTiS4 (abbreviated CZTiS), using a hydrothermal technique. The results confirm that time (24, 48 and 72 hours) and temperature (250, 275, and 300°C) factors, used in synthesis process, regulate different levels of electrical conductivity in these materials. The results of ultraviolet spectroscopy (UV) analysis, confirm the production of semiconductor solids with Band-gap values around 1.4eV, being coherent with a strong absorption in the ultraviolet region. The X-Ray Diffraction analysis (XRD), confirm that there is an opposite and proportional relationship between the crystal sizes, the reaction times and the synthesis temperature. In all cases, the particle sizes were 50-100nm. The results derived from Scanning Electron Microscopy (SEM), confirm the obtaining of homogenous materials with optimal morphological properties in accordance with synthesis method. Similarly, the composition values derived from the Energy-Dispersion X-ray Spectroscopy analysis (EDS), shown that obtained compositions are in agree with expected values. Finally, the results of electric characterization, confirm that used synthesis parameters show a strong dependence on the conductive behaviour of solids being the most relevant result the shown by the solid obtained at 300°C and 72 hours of reaction in accordance with preliminary works.