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Development of a new “n-p” heterojunction based on TiO2 and CuMnO2 synergy materials

A new “n-p” heterojunction type based on TiO2 (n-type) and CuMnO2 (p-type) was fabricated for the first time using three different methods for layer-by-layer deposition: (1) Au films on glass deposited by sputtering; (2) TiO2 film on Au deposited by Doctor-Blade, and (3) finally CuMnO2 film on TiO2...

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Bibliographic Details
Published in:Materials chemistry and physics 2021-11, Vol.272, p.124999, Article 124999
Main Authors: Lazau, Carmen, Poienar, Maria, Orha, Corina, Ursu, Daniel, Nicolaescu, Mircea, Vajda, Melinda, Bandas, Cornelia
Format: Article
Language:English
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Summary:A new “n-p” heterojunction type based on TiO2 (n-type) and CuMnO2 (p-type) was fabricated for the first time using three different methods for layer-by-layer deposition: (1) Au films on glass deposited by sputtering; (2) TiO2 film on Au deposited by Doctor-Blade, and (3) finally CuMnO2 film on TiO2 by spin-coating. The structural and morphological characteristics of the CuMnO2, TiO2 films were investigated by XRD and SEM/EDX techniques, and the phase stability was confirmed after the performed thermal treatments. The Mott-Schottky measurement of the double-layered composite G-Au-TiO2-CuMnO2 was performed for confirming the “n-p” junction formation. The electrical parameters were investigated by I-V measurements exhibiting nonlinear characteristics of the “n-p” heterojunction, and the ideality factor ~4.1 was calculated using the I–V curve fitting. The electrical resistivity measurements show a slight decrease in the resistivity function of temperature. [Display omitted] •A new n-p heterojunction based on TiO2 and CuMnO2 materials was successfully obtained.•XRD and SEM/EDX confirm the stability of the phases and the purity of the materials after the heat treatments performed.•Achieving a favorable n-TiO2/p-CuMnO2 heterojunction was confirmed by Mott-Schottky measurements.•The electrical characteristics confirm that the n-p heterojunction G-Au-TiO2-CuMnO2 has a diode behavior.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2021.124999