Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

On the base of the physical analytical models based on Poisson's equation, drift-diffusion and continuity equations the forward current-voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is shown on the base of analysis of cu...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.917 (8), p.82010
Main Authors: Panchenko, P V, Rybalka, S B, Malakhanov, A A, Demidov, A A, Krayushkina, E Yu, Shishkina, O A
Format: Article
Language:English
Subjects:
Continuity equation
Current voltage characteristics
Electrons
Emission analysis
Mathematical models
Physics
Poisson equation
Schottky diodes
Silicon carbide
Thermionic emission
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Summary:On the base of the physical analytical models based on Poisson's equation, drift-diffusion and continuity equations the forward current-voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is shown on the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is shown that the proposed simulation model of Schottky diode corresponds to the almost "ideal" diode with ideality factor n equals 1.1. Because of this it is determined that the effective Schottky barrier height φB equals 1.57 eV and 1.17 eV for Ni/6H and Ti/4H silicon carbide Schottky diode type, respectively.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/8/082010