XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers

XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbONx under the layer of niobium oxide is generated.

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.917 (9), p.92001
Main Authors: Lubenchenko, A.V., Batrakov, A.A., Krause, S., Pavolotsky, A.B., Shurkaeva, I. V., Ivanov, D.A., Lubenchenko, O.I.
Format: Article
Language:English
Subjects:
Buffer layers
Depth profiling
Gallium nitrides
Niobium nitride
Niobium oxides
Physics
Thin films
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Description
Summary:XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbONx under the layer of niobium oxide is generated.
ISSN:1742-6588
1742-6596
1742-6596
DOI:10.1088/1742-6596/917/9/092001