Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate w...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.917 (5), p.52021
Main Authors: Kolodeznyi, E S, Novikov, I I, Babichev, A V, Kurochkin, A S, Gladyshev, A G, Karachinsky, L Ya, Gadzhiev, I M, Buyalo, M S, Usikova, A A, Ilynskaya, N D, Bougrov, V E, Egorov, A Yu
Format: Article
Language:English
Subjects:
Crystal lattices
Heterostructures
Indium gallium arsenides
Laser mode locking
Lasers
Optical pulses
Physics
Pulse duration
Pulse repetition rate
Quantum wells
Semiconductor lasers
Timing jitter
Vibration
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Summary:We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/5/052021