Optical investigations and strain effect in AlGaN/GaN epitaxial layers

AlxGa1-xN epilayers with x ranging from 0.20 to 0.50 have been grown on c-plane sapphire substrate by metal-organic chemical vapor deposition. The thickness, composition, strain and stress values of the AlGaN were determined by high resolution X-ray diffraction. The optical properties of the epilaye...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-06, Vol.864 (1), p.12021
Main Authors: Jayasakthi, M., Juillaguet, S., Peyre, H., Konczewicz, L., Moret, M., Briot, O., Baskar, K., Contreras, S.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Epitaxial layers
Metalorganic chemical vapor deposition
Optical properties
Organic chemicals
Organic chemistry
Photoluminescence
Physics
Room temperature
Sapphire
Strain analysis
Substrates
Temperature dependence
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Summary:AlxGa1-xN epilayers with x ranging from 0.20 to 0.50 have been grown on c-plane sapphire substrate by metal-organic chemical vapor deposition. The thickness, composition, strain and stress values of the AlGaN were determined by high resolution X-ray diffraction. The optical properties of the epilayers were studied using photoluminescence (PL) and reflectivity measurements. The effect of the stress on the bandgap can be explained by room temperature PL. The temperature dependent PL result shows the well-known "S-shape" behavior.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/864/1/012021