Lasing of InP AlInAs quantum dots in AlInAs microdisk cavity

AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP AlInAs (interface aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-02, Vol.690 (1), p.12023
Main Authors: Lebedev, D V, Mintairov, A M, Kulagina, M M, Troshkov, S I, Kapaldo, J, Merz, J L, Rouvimov, S, Juska, G, Gocalinska, A, Moroni, S T, Pelucchi, E
Format: Article
Language:English
Subjects:
Chemical etching
Coupled modes
Coupling
Holes
Lasing
Lattice matching
Lattice vibration
Low temperature
Optical pumping
Physics
Q factors
Quantum dots
Spontaneous emission
Whispering gallery modes
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Summary:AlInAs microdisk cavities having quality factor Q ∼ 15 000 were fabricated from lattice-matched InP AlInAs (interface aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W cm2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP InAlAs interface as the main active elements.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/690/1/012023