Investigation of thermal linear expansion for nanostructured Si0.8Ge0.2P0.022 in wide temperature range

The results of investigation of thermal linear expansion for high temperature thermoelectric material nanostructured Si0.8Ge0.2P0.022 n-type with maximum thermoelectric figure of merit Z = 0.98 10-3 K are presented. Investigations were carried out by dilatometric method in the temperature range from...

Full description

Saved in:
Bibliographic Details
Main Authors: Rogachev, M S, Pavlova, L M, Shtern, Yu I
Format: Conference Proceeding
Language:English
Subjects:
Dilatometry
Figure of merit
High temperature
Infrared radiation
Nanostructure
Physics
Temperature
Temperature dependence
Thermal expansion
Thermoelectric materials
Thermoelectricity
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The results of investigation of thermal linear expansion for high temperature thermoelectric material nanostructured Si0.8Ge0.2P0.022 n-type with maximum thermoelectric figure of merit Z = 0.98 10-3 K are presented. Investigations were carried out by dilatometric method in the temperature range from 300 to 1220 K in dynamic heating and cooling regimes with using of infrared radiation source. Temperature dependence of thermal linear expansion coefficient (TLEC) was analyzed. The average value of TLEC for Si0.8Ge0.2P0.022 was determined, which is equal to ∼5.9·10-6 K-1.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/741/1/012203