Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions

Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coeffici...

Full description

Saved in:
Bibliographic Details
Published in:High energy chemistry 2021-09, Vol.55 (5), p.399-401
Main Authors: Fairushin, I. I., Shemakhin, A. Yu, Khabir’yanova, A. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Copper
Discharge
Low pressure gases
Molecular dynamics
Physical Chemistry
Plasma Chemistry
Process parameters
Self-assembly
Silicon substrates
Sputtering
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coefficient are consistent with experimental data. The nanofilm growth rate has been determined.
ISSN:0018-1439
1608-3148
DOI:10.1134/S0018143921050039