Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions

Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coeffici...

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Published in:High energy chemistry 2021-09, Vol.55 (5), p.399-401
Main Authors: Fairushin, I. I., Shemakhin, A. Yu, Khabir’yanova, A. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Copper
Discharge
Low pressure gases
Molecular dynamics
Physical Chemistry
Plasma Chemistry
Process parameters
Self-assembly
Silicon substrates
Sputtering
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description Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coefficient are consistent with experimental data. The nanofilm growth rate has been determined.
doi_str_mv 10.1134/S0018143921050039
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subjects Chemistry
Chemistry and Materials Science
Copper
Discharge
Low pressure gases
Molecular dynamics
Physical Chemistry
Plasma Chemistry
Process parameters
Self-assembly
Silicon substrates
Sputtering
title Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions
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