Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

Monte Carlo simulations forecast Gunn-like oscillations at ∼0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are an...

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Bibliographic Details
Published in:Journal of physics. Conference series 2015-10, Vol.647 (1), p.12039
Main Authors: Rodriguez-Fernandez, A, Íñiguez-de-la-Torre, I, García-Pérez, Ó, García, S, Westlund, A, Nilsson, P-Å, Grahn, J, González, T, Mateos, J, Pérez, S
Format: Article
Language:English
Subjects:
Diodes
Emission analysis
Oscillations
Physics
Temperature effects
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Summary:Monte Carlo simulations forecast Gunn-like oscillations at ∼0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the oscillations and can increase their frequency. On the other hand, the ratio between cap and recess charges plays an important role for the onset of oscillations. A high level of traps in the recess region may completely attenuate the emission.
ISSN:1742-6588
1742-6596
1742-6596
DOI:10.1088/1742-6596/647/1/012039