Terahertz excitations in HgTe-based field effect transistors

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor. Photoconductivity measurements allow for the observation of cyclotron resonance and Shubnikov-de-Haas-like oscillations. However, an unexpected peak was observed at the critical magnetic field value for w...

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Bibliographic Details
Published in:Journal of physics. Conference series 2015-10, Vol.647 (1), p.12009
Main Authors: Kadykov, A, Consejo, C, Teppe, F, Desrat, W, Viti, L, Vitiello, M S, Coquillat, D, Ruffenach, S, Morozov, S, Kristopenko, S, Marcinkiewicz, M, Dyakonova, N, Knap, W, Gavrilenko, V, Michailov, N N, Dvoretskii, S A
Format: Article
Language:English
Subjects:
Cyclotron resonance
Field effect transistors
Magnetic fields
Phase transitions
Photoconductivity
Physics
Semiconductor devices
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Summary:We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor. Photoconductivity measurements allow for the observation of cyclotron resonance and Shubnikov-de-Haas-like oscillations. However, an unexpected peak was observed at the critical magnetic field value for which zero mode Landau Levels are crossing. Therefore, this specific feature of TeraHertz photoconductivity spectra can tentatively attributed to this magnetic field driven topological phase transition.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/647/1/012009