Comparative performance of the ultra-short channel technology for the DG-FinFET characteristics using different high-k dielectric materials

• Published in: Indian journal of physics 2021-10, Vol.95 (10), p.1977-1984
• Main Authors: Bourahla, Nassima, Bourahla, Ahmed, Hadri, Baghdad
• Format: Article
• Language: English
• Subjects: Astrophysics and Astroparticles; Dielectrics; MOSFETs; Original Paper; Performance enhancement; Physics; Physics and Astronomy; Silicon dioxide; Tantalum; Tantalum oxides; Threshold voltage; Tin dioxide; Transconductance; Zirconium dioxide
• ISSN: 0973-1458; 0974-9845
• DOI: 10.1007/s12648-020-01846-9

The downscaling of the SOI-MOSFET device has an important role of the advanced technology in the semiconductor industry, so the researchers aim to find the structure which can improve the considerable reduction, this paper is investigated a proposal novel device in the nanoscale technology of the double-gate FinFET using different high-k materials gate (SiO 2 , SnO 2 , ZrO 2 and Ta 2 O 5 ) for the ultra-short gate L g  = 5 nm on different parameters such as: the subthreshold voltage (SS), the threshold voltage (Vth), the transconductance (gm), the ON and OFF currents ( I on , I off ) and also the I on / I off ratio and the electrical field ( E ) by the three-dimensional TCAD-SILVACO simulator. The results reveal that the Ta 2 O 5 material of gate with high permittivity ( k  = 27) turns out better values for (Vth, SS, ON, OFF current and ON/OFF ratio current, gm, electrical field ( E )) in comparison with other dielectric SiO 2 , SnO 2 , ZrO 2 which improve the performance of the device