Photoelectrical characteristics of Ga2O3-GaAs structures

The influence of thermal annealing and exposure in oxygen plasma on photoelectrical characteristics of Ga2O3-GaAs structures in visible and UV-region is investigated. Thermal annealing enhances the transparence of Ga2O3 films in visible range and leads to the appearance of photocurrent in Ga2O3-GaAs...

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Bibliographic Details
Main Authors: Kalygina, V M, Petrova, Yu S, Prudaev, I A
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Gallium oxides
Oxygen plasma
Photoelectric effect
Photoelectricity
Physics
Radioactivity
Transparence
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Summary:The influence of thermal annealing and exposure in oxygen plasma on photoelectrical characteristics of Ga2O3-GaAs structures in visible and UV-region is investigated. Thermal annealing enhances the transparence of Ga2O3 films in visible range and leads to the appearance of photocurrent in Ga2O3-GaAs-structures. Ga2O3 films absorb UV- radiation beginning with 240 nm and lower.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/541/1/012029