Luminescence of SiC films grown by a vapor phase reaction

SiC films grown by vapor phase reaction consist of multicrystalline grains. The size of grains depends on growth parameters, such as temperature and the relative concentration of the Si and C components. A small fraction of large grains demonstrate very efficient luminescence. Several techniques hav...

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Bibliographic Details
Published in:Journal of physics. Conference series 2011-02, Vol.281 (1), p.012019-5
Main Authors: Steinman, E A, Yakimov, E B, Filonov, K N, Tereshchenko, A N
Format: Article
Language:English
Subjects:
Cathodoluminescence
Diffraction
Emission
Emission analysis
Grains
Luminescence
Origins
Photoluminescence
Physics
Silicon carbide
Vapor phases
X ray analysis
X-rays
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Summary:SiC films grown by vapor phase reaction consist of multicrystalline grains. The size of grains depends on growth parameters, such as temperature and the relative concentration of the Si and C components. A small fraction of large grains demonstrate very efficient luminescence. Several techniques have been used to study the origin of the luminescence. Cathodoluminescence and photoluminescence revealed flat regions as sources of emission. Diffraction of back scattered electrons and X-ray analysis suggests that efficient emission is observed for grains with a small fraction of the rhombohedral phase. On the basis of the experimental data we assumed that the layers of rhombohedral phase or the interface between these layers and the host material are the origin of the luminescence.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/281/1/012019