Fabrication of porous nanostructured lead chalcogenide semiconductors for modern thermoelectric and optoelectronic applications

Porous structures of lead chalcogenides with porosities of 20-68% and pore dimensions as small as 7-20 nm were fabricated using an anodic electrochemical etching technique applied to epitaxial PbTe and PbSe films on Si. Anodized lead selenide demonstrated two basic types of porous morphology: quasip...

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Bibliographic Details
Published in:Journal of physics. Conference series 2011-04, Vol.291 (1), p.012023-6
Main Authors: Zimin, S P, Gorlachev, E S, Naumov, V V, Buchin, E Yu, Zogg, H
Format: Article
Language:English
Subjects:
Chalcogenides
Crystal structure
Electrochemical etching
Intermetallic compounds
Intermetallics
Lead selenides
Lead tellurides
Morphology
Optoelectronics
Photonic crystals
Physics
Porosity
Quantum confinement
Semiconductors
Thermoelectricity
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Summary:Porous structures of lead chalcogenides with porosities of 20-68% and pore dimensions as small as 7-20 nm were fabricated using an anodic electrochemical etching technique applied to epitaxial PbTe and PbSe films on Si. Anodized lead selenide demonstrated two basic types of porous morphology: quasiporous noncontinuous layers and hierarchical porous layers. Lead telluride had a more typical mesoporous morphology, with pores propagating at an angle of 35° to surface, which corresponds to the
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/291/1/012023