TEM and XANES study of MOVPE grown InAIN layers with different indium content

We present structure and spatially resolved composition studies by TEM (Transmission Electron Microscopy) and XANES (X-ray Absorption Near Edge Structure) of InAIN MOVPE (Metal-Organic Vapor Phase Epitaxy) epilayers containing 16-27 at% of indium. Investigations of the In L3 edge by synchrotron radi...

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Bibliographic Details
Published in:Journal of physics. Conference series 2011-11, Vol.326 (1), p.012013
Main Authors: Kret, S, Wolska, A, Klepka, M T, Letrouit, A, Ivaldi, F, Szczepańska, A, Carlin, J -F, Kaufmann, N A K, Grandjean, N
Format: Article
Language:English
Subjects:
Columnar structure
Composition
Indium
Metalorganic chemical vapor deposition
Phase separation
Physics
Radiation absorption
Synchrotron radiation
Synchrotrons
Transmission electron microscopy
Vapor phase epitaxy
Vapor phases
X ray absorption
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Summary:We present structure and spatially resolved composition studies by TEM (Transmission Electron Microscopy) and XANES (X-ray Absorption Near Edge Structure) of InAIN MOVPE (Metal-Organic Vapor Phase Epitaxy) epilayers containing 16-27 at% of indium. Investigations of the In L3 edge by synchrotron radiation absorption show a significant change of the post-edge structure depending on the indium content. We attribute this to the solubility limit and phase separation in this system. Our measurements suggest that the critical composition is 18% for our growth conditions. HRTEM cross-sectional and EDX investigations confirm such phase separation as well as the changing of the structure from 2D growth to columnar like growth for the sample with the highest indium content.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/326/1/012013