Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography

We have studied basal-plane stacking faults in a non-polar (11-20) GaN epilayer using high-resolution electron microscopy and off-axis electron holography. The microstructure of the basal-plane stacking faults (BSFs) has been determined to be I1 type from high-resolution TEM images. High-resolution...

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Bibliographic Details
Published in:Journal of physics. Conference series 2010-02, Vol.209 (1), p.012012
Main Authors: Liu, Lewis Z-Y, Rao, D V Sridhara, Kappers, M J, Humphreys, C J, Geiger, D
Format: Article
Language:English
Subjects:
Electric fields
Fault detection
High resolution
High resolution electron microscopy
Holography
Image reconstruction
Image resolution
Physics
Spatial resolution
Stacking faults
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Summary:We have studied basal-plane stacking faults in a non-polar (11-20) GaN epilayer using high-resolution electron microscopy and off-axis electron holography. The microstructure of the basal-plane stacking faults (BSFs) has been determined to be I1 type from high-resolution TEM images. High-resolution holograms along the [11-20] zone axis were obtained by off-axis electron holography on a Cs-corrected TEM, providing ~2 Å spatial resolution in the reconstructed amplitude and phase images. Phase fluctuations across the stacking faults were detected, suggesting the presence of a built-in electric field. The uncertainties in the experiments and their interpretation are discussed.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/209/1/012012