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Atomic scale graphene landscapes – natural, dosed and doped
Graphene surfaces are scrutinised for topographic peculiarities, which occur naturally or have been introduced. High-angle-annular-dark-field (HAADF) and bright-field lattice images of graphene acquired in an aberration-corrected scanning transmission electron microscope (STEM), in conjunction with...
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Published in: | Journal of physics. Conference series 2010-07, Vol.241 (1), p.012098 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Graphene surfaces are scrutinised for topographic peculiarities, which occur naturally or have been introduced. High-angle-annular-dark-field (HAADF) and bright-field lattice images of graphene acquired in an aberration-corrected scanning transmission electron microscope (STEM), in conjunction with electron energy-loss spectroscopy (EELS), show vacancy- and ad-atom-related point defects, as well as the presence of hydrogen. In boron implanted graphene, the edges of graphene sheets appear to be capture centres for boron atoms. Furthermore, rippling effects in the graphene sheets can be revealed by fast Fourier transform (FFT) procedures; these help visualise changes in the bond length projection arising from inclinations of the sheet. |
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ISSN: | 1742-6596 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/241/1/012098 |