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First principles calculations of the scattering cross section of substitutional carbon in silicon
A method of calculating scattering cross-sections based on first principles electronic structure calculations, previously used for alloy scattering in SiGe is presented and applied to substitutional carbon in silicon. It is found that the intravalley scattering is the predominant scattering mechanis...
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Published in: | Journal of physics. Conference series 2010-07, Vol.242 (1), p.012003 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A method of calculating scattering cross-sections based on first principles electronic structure calculations, previously used for alloy scattering in SiGe is presented and applied to substitutional carbon in silicon. It is found that the intravalley scattering is the predominant scattering mechanism with a contribution to the scattering rate around a factor of 4 greater than intravalley alloy scattering in SiGe. |
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ISSN: | 1742-6596 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/242/1/012003 |