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First principles calculations of the scattering cross section of substitutional carbon in silicon

A method of calculating scattering cross-sections based on first principles electronic structure calculations, previously used for alloy scattering in SiGe is presented and applied to substitutional carbon in silicon. It is found that the intravalley scattering is the predominant scattering mechanis...

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Bibliographic Details
Published in:Journal of physics. Conference series 2010-07, Vol.242 (1), p.012003
Main Authors: Vaughan, M P, Fahy, S
Format: Article
Language:English
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Summary:A method of calculating scattering cross-sections based on first principles electronic structure calculations, previously used for alloy scattering in SiGe is presented and applied to substitutional carbon in silicon. It is found that the intravalley scattering is the predominant scattering mechanism with a contribution to the scattering rate around a factor of 4 greater than intravalley alloy scattering in SiGe.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/242/1/012003