Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz) 2

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BT...

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Bibliographic Details
Published in:Journal of physics. Conference series 2010-11, Vol.253 (1), p.12048
Main Authors: Tomova, R L, Petrova, P K, Stoycheva-Topalova, R T
Format: Article
Language:English
Subjects:
Aluminum
Doping
Electroluminescence
Emission spectra
Light emitting diodes
Organic light emitting diodes
Physics
Polyvinyl carbazole
Zinc
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Summary:Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz)2) in configuration: ITO/PVK:TPD/ Zn(BTz)2 (x nm)/ Rubrene (1 nm)/ Zn(BTz)2 (75−x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz)2 (x→ 0–15 nm) and to Zn(BTz)2/Al (x→ 70–75 nm) interfaces and shift toward emission of Zn(BTz)2 increasing the distance of Rubrene from both interfaces (x→35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/253/1/012048