Effect of pressure and magnetic field on the electrical resistivity of TbB6

Electrical resistivity of a single crystal of TbB6 was studied under hydrostatic pressures up to 2.1 GPa and magnetic fields up to 9 T. The Néel temperature, rN, decreases linearly with increasing pressure: lnTN/ P 3.14×10-2 GPa-1 at zero external field. This pressure dependence of TN weakens as ext...

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Bibliographic Details
Published in:Journal of physics. Conference series 2009-06, Vol.176 (1), p.012035
Main Authors: Sakai, Takeshi, Oomi, Gendo, Kunii, Satoru
Format: Article
Language:English
Subjects:
Conduction electrons
Electrical resistivity
External pressure
Magnetic fields
Magnetic moments
Magnetism
Magnetoresistance
Magnetoresistivity
Physics
Pressure dependence
Pressure effects
Single crystals
Transition probabilities
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Summary:Electrical resistivity of a single crystal of TbB6 was studied under hydrostatic pressures up to 2.1 GPa and magnetic fields up to 9 T. The Néel temperature, rN, decreases linearly with increasing pressure: lnTN/ P 3.14×10-2 GPa-1 at zero external field. This pressure dependence of TN weakens as external fields increase. At ambient pressure, the magnetoresistance at 4.2 K is positive up to 4.8 T and becomes negative above 4.8 T. The positive magnetoresistance observed at ambient pressure is suppressed by applying pressure, which enhances the negative magnetoresistance. These results are interpreted in terms of the reduction of the scattering of conduction electrons, due to disordered magnetic moment being suppressed by derealization of 4f electrons at high pressure, and the magnetic field variation of the large transition probability between the ground state and the excited levels.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/176/1/012035