Graphene Structures-Based 2D Nanotransistors (Review)

The structure and main parameters of field-effect transistors (FETs) based on gapless graphene (Gr) and its derivatives with semiconducting properties, transistors on flexible substrates, tunneling transistors (TFETs) based on graphene mono- and bilayers, and transistors based on graphene nanoribbon...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2021-09, Vol.66 (9), p.1108-1122
Main Authors: Ponomarenko, V. P., Popov, V. S., Popov, S. V.
Format: Article
Language:English
Subjects:
Bilayers
Communications Engineering
Engineering
Epitaxy
Field effect transistors
Graphene
Graphite
Nanoribbons
Networks
Semiconductor devices
Semiconductors
Substrates
Transistors
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Summary:The structure and main parameters of field-effect transistors (FETs) based on gapless graphene (Gr) and its derivatives with semiconducting properties, transistors on flexible substrates, tunneling transistors (TFETs) based on graphene mono- and bilayers, and transistors based on graphene nanoribbons are described.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226921090138