Modeling of planar carbon nanotube field effect transistor and three dimensional simulation of current-voltage characteristics

We provide a CNTFET model with planar geometry. Planar CNTFETs constitute the majority of devices fabricated to date, mostly due to their relative simplicity and moderate compatibility with existing manufacturing technologies. We explore the possibilities of using non-equilibrium Green function meth...

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Bibliographic Details
Published in:Journal of physics. Conference series 2009-09, Vol.187 (1), p.012049
Main Authors: Hien, Dinh Sy, Luong, Nguyen Thi, Tuan, Thi Tran Anh, Nga, Dinh Viet
Format: Article
Language:English
Subjects:
Carbon nanotubes
Current voltage characteristics
Data analysis
Field effect transistors
Graphical user interface
Green's functions
Physics
Semiconductor devices
Simulation
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Summary:We provide a CNTFET model with planar geometry. Planar CNTFETs constitute the majority of devices fabricated to date, mostly due to their relative simplicity and moderate compatibility with existing manufacturing technologies. We explore the possibilities of using non-equilibrium Green function method to get I-V characteristics for CNTFETs. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, intuitive display of calculation results, and in-situ data analysis methods. In this paper, we review the capabilities of simulator, and give examples of typical CNTFET 3D simulations. The I-V characteristics of CNTFET are also presented.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/187/1/012049