Sensitivity of silicon nanowires in biosensor applications

A 2-dimensional simulation tool was designed to investigate the threshold voltage behaviour for a silicon nanowire constructed in a top down approach on silicon on insulator (SOI) material. The simulation shows, assuming a positive charge of +1·1011 cm-2 between the silicon/silicon dioxide interface...

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Bibliographic Details
Published in:Journal of physics. Conference series 2008-03, Vol.100 (5), p.052042
Main Authors: Elfström, N, Linnros, J
Format: Article
Language:English
Subjects:
Biosensors
Nanowires
Physics
Silicon
Silicon dioxide
TECHNOLOGY
TEKNIKVETENSKAP
Threshold voltage
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Summary:A 2-dimensional simulation tool was designed to investigate the threshold voltage behaviour for a silicon nanowire constructed in a top down approach on silicon on insulator (SOI) material. The simulation shows, assuming a positive charge of +1·1011 cm-2 between the silicon/silicon dioxide interface and negatively charged surface states on top of the nanowire that the threshold voltage increases with decreasing height of the nanowire.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/100/5/052042