Comparative study of electrical properties of nano to polycrystalline diamond films

Low-resistance ohmic or Schotky contacts between diamond and metal is primary goal of electronic devices and microsystems based on diamond. The contact resistance depends not only on the choice of metals but also on annealing, layer thickness and other parameters. Combination of titanium, platinum a...

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Bibliographic Details
Published in:Journal of physics. Conference series 2008-03, Vol.100 (5), p.052097
Main Authors: Vojs, M, Kromka, A, Ižák, T, Škriniarová, J, Novotný, I, Valent, P, Michalka, M, Kováčik, T, Veselý, M
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Comparative studies
Contact resistance
Crystal defects
Crystallography
Diamond films
Electric contacts
Electrical properties
Electronic devices
Gold
Grain size
Microwave plasmas
Morphology
Oxidation
Parameters
Physics
Polycrystalline diamond
Polycrystals
Silicon substrates
Thickness
Titanium
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Summary:Low-resistance ohmic or Schotky contacts between diamond and metal is primary goal of electronic devices and microsystems based on diamond. The contact resistance depends not only on the choice of metals but also on annealing, layer thickness and other parameters. Combination of titanium, platinum and gold (with co-deposited gold on top to prevent oxidation) is most widely used and yields to good conductivy after being annealed. Diamond films were grown by Microwave Plasma (MP) and Hot Filament Chemical Vapor Deposition (HF CVD) on Si substrates. The dependence of electrical properties on the film morphology was studied. The surface morphology of grown layers was analyzed by scanning electron microscopy (SEM). The different crystallographic character of diamond layers, i.e. either polycrystalline or nanocrystalline, was achieved by using different deposition conditions. Lower-quality diamond films were less sensitive to variation in the operating conditions. The film break-down voltage and other electrical parameters strongly depend on the morphological character, the grain size and defects in layers.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/100/5/052097