Tunnel junction based displacement sensing for nanoelectromechanical systems

We demonstrate the feasibility of using normal state Al–AlOx–Al tunnel junctions for displacement sensing. The experimental setup consisted of tunnel junctions fabricated on a thin silicon nitride membrane, which was actuated with an AFM tip. Advantages of tunnel junction detectors are their small s...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2007-12, Vol.92 (1), p.012051
Main Authors: Koppinen, P J, Lievonen, J T, Ahlskog, M E, Maasilta, I J
Format: Article
Language:English
Subjects:
Displacement
Microscopes
Nanoelectromechanical systems
Physics
Silicon nitride
Tunnel junctions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate the feasibility of using normal state Al–AlOx–Al tunnel junctions for displacement sensing. The experimental setup consisted of tunnel junctions fabricated on a thin silicon nitride membrane, which was actuated with an AFM tip. Advantages of tunnel junction detectors are their small size, relatively high gauge factor, existing high frequency read–out schemes, and ease of integration with the mechanical system. In addition, Al–AlOx– Al junctions can be used for displacement sensing in zero magnetic field, unlike sensors based on magnetic tunnel junctions.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/92/1/012051