Two-dimensional triphenylamine-based polymers for ultrastable volatile memory with ultrahigh on/off ratio

• Published in: Polymer (Guilford) 2021-09, Vol.230, p.124076, Article 124076
• Main Authors: Chen, Kang, Yin, Yuhang, Song, Cheng, Liu, Zhengdong, Wang, Xiaojing, Wu, Yueyue, Zhang, Jing, Zhao, Jianfeng, Tang, Minghua, Liu, Juqing
• Format: Article
• Language: English
• Subjects: 2D polymer; Control stability; Dynamic random access memory; High on/off ratio thermal stability; Interface stability; Liquid-solid interfaces; Polymers; Thermal stability; Thickness; Triphenylamine
• ISSN: 0032-3861; 1873-2291
• DOI: 10.1016/j.polymer.2021.124076

Two-dimensional (2D) memristive materials are of primary interest for resistive memory electronics. Herein, we report a high performance volatile dynamic-random-access memory (DRAM) based on 2D triphenylamine polymer. The 2D polymer was prepared via a solid-liquid interface limited polymerization method, with the merits of large-area, structure stability, and controllable film thicknesses. Utilizing the layered polymer as memristive medium in diode, the device shows a typical volatile DRAM performance. Impressively, the memory has an ultrahigh on/off current ratio up to 107, as well as outstanding thermal stability approaching at 300 °C. Both current ratio and thermal stability are higher than most previous polymer DRAM memories. Our work provides an effective strategy to construct scalable and stable 2D polymers toward high performance memory. A high performance dynamic random-access memory (DRAM) based on two-dimensional (2D) triphenylamine-based polymer is reported. The device shows typical volatile memory function, with an ultrahigh on/off current ratio up to 107, as well as outstanding thermal stability approaching at 300 °C. [Display omitted] •A large-area and structure stable 2D triphenylamine-based polymer was prepared through interface-limited polymerization.•A 2D material-based volatile memory was fabricated with an ultrahigh on/off current ratio up to 107.•The device showed DRAM memory performance even after annealing at 300 °C, indicating its excellent thermal stability.