Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

In this study, the room temperature high-pressure oxidation technique is proposed to exquisitely manipulate the surface morphology and oxygen depth-profile of the tungsten-doped indium zinc oxide (InWZnO) film, and its influence on the switching characteristics is emphasized. Based on the atomic for...

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Bibliographic Details
Published in:Applied physics letters 2021-10, Vol.119 (17)
Main Authors: Gan, Kai-Jhih, Liu, Po-Tsun, Hsu, Chih-Chieh, Ruan, Dun-Bao, Sze, Simon M.
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopes
Atomic force microscopy
Chemical properties
Control equipment
Depth profiling
Morphology
Oxidation resistance
Oxygen
Photoelectrons
Pressure effects
Room temperature
Switching
Thin films
Vacancies
Zinc oxide
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Summary:In this study, the room temperature high-pressure oxidation technique is proposed to exquisitely manipulate the surface morphology and oxygen depth-profile of the tungsten-doped indium zinc oxide (InWZnO) film, and its influence on the switching characteristics is emphasized. Based on the atomic force microscope analysis, the smoother surface morphology of the InWZnO film after the high-pressure oxidation treatment is observed. Moreover, it is observed that the InWZnO film has significantly manipulated the oxygen vacancy depth-profile and improved the chemical properties after high-pressure oxidation treatment, according to the x-ray photoelectron spectroscopy depth profiling results. Compared with the control device, the device with high-pressure oxidation treatment exhibited highly uniform resistance states and set/reset repeatability. Finally, the mechanism of the effect of high-pressure oxidation treatment on the InWZnO film is completely examined according to the in-depth material analysis and physical model discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0065269