High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers

A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of...

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Bibliographic Details
Published in:IEEE electron device letters 2021-11, Vol.42 (11), p.1588-1591
Main Authors: Zhang, Lisen, Liang, Shixiong, Lv, Yuanjie, Yang, Dabao, Fu, Xingchang, Song, Xubo, Gu, Guodong, Xu, Peng, Guo, Yanmin, Bu, Aimin, Feng, Zhihong, Cai, Shujun
Format: Article
Language:English
Subjects:
Anodes
Chains
Efficiency
Electrons
frequency doubler
Frequency measurement
GaN
high power
Power amplifiers
Power generation
Radar imaging
Schottky barrier diodes
Schottky diodes
Solid state
THz
Wireless communication
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Summary:A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of 1322 mW with 27 % efficiency is derived, while a peak efficiency of 33.1 % is determined at 150 GHz with an input power of 2.3 W. The fabricated 300 GHz doubler delivers pulsed output power that is greater than 110 mW from 292 GHz to 305 GHz with an efficiency of 11.3 % to 14.7 %. A peak output power of 183.4 mW with 13.9 % efficiency is obtained at 302 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3110781