High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers

A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2021-11, Vol.42 (11), p.1588-1591
Main Authors: Zhang, Lisen, Liang, Shixiong, Lv, Yuanjie, Yang, Dabao, Fu, Xingchang, Song, Xubo, Gu, Guodong, Xu, Peng, Guo, Yanmin, Bu, Aimin, Feng, Zhihong, Cai, Shujun
Format: Article
Language:English
Subjects:
Anodes
Chains
Efficiency
Electrons
frequency doubler
Frequency measurement
GaN
high power
Power amplifiers
Power generation
Radar imaging
Schottky barrier diodes
Schottky diodes
Solid state
THz
Wireless communication
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3
cites cdi_FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3
container_end_page 1591
container_issue 11
container_start_page 1588
container_title IEEE electron device letters
container_volume 42
creator Zhang, Lisen
Liang, Shixiong
Lv, Yuanjie
Yang, Dabao
Fu, Xingchang
Song, Xubo
Gu, Guodong
Xu, Peng
Guo, Yanmin
Bu, Aimin
Feng, Zhihong
Cai, Shujun
description A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of 1322 mW with 27 % efficiency is derived, while a peak efficiency of 33.1 % is determined at 150 GHz with an input power of 2.3 W. The fabricated 300 GHz doubler delivers pulsed output power that is greater than 110 mW from 292 GHz to 305 GHz with an efficiency of 11.3 % to 14.7 %. A peak output power of 183.4 mW with 13.9 % efficiency is obtained at 302 GHz.
doi_str_mv 10.1109/LED.2021.3110781
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2586590192</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9530519</ieee_id><sourcerecordid>2586590192</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3</originalsourceid><addsrcrecordid>eNo9kEFLw0AQhRdRsFbvgpcFz6kzmUyye6y1tkJRoXpeNsnGptSm7raI_nq3tHiaGea9ecMnxDXCABH03Wz8MEghxQHFsVB4InrIrBLgnE5FD4oME0LIz8VFCEsAzLIi64nhtP1YJK_dt_OSAORk-ivn3aqtk_nWbl3sd75ycrSw7Vre2-Bq2a3lxD7Lh25XrpwPl-Kssavgro61L94fx2-jaTJ7mTyNhrOkIlLbxDWKWaOuMuYirygjoKJgTEtVc5lzxo0inRNUqsESwOVsKS3R2jru6ob64vZwd-O7r50LW7OMv61jpElZ5awBdRpVcFBVvgvBu8ZsfPtp_Y9BMHtQJoIye1DmCCpabg6W1jn3L9dMwKjpD9D2X6g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2586590192</pqid></control><display><type>article</type><title>High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers</title><source>IEEE Xplore (Online service)</source><creator>Zhang, Lisen ; Liang, Shixiong ; Lv, Yuanjie ; Yang, Dabao ; Fu, Xingchang ; Song, Xubo ; Gu, Guodong ; Xu, Peng ; Guo, Yanmin ; Bu, Aimin ; Feng, Zhihong ; Cai, Shujun</creator><creatorcontrib>Zhang, Lisen ; Liang, Shixiong ; Lv, Yuanjie ; Yang, Dabao ; Fu, Xingchang ; Song, Xubo ; Gu, Guodong ; Xu, Peng ; Guo, Yanmin ; Bu, Aimin ; Feng, Zhihong ; Cai, Shujun</creatorcontrib><description>A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of 1322 mW with 27 % efficiency is derived, while a peak efficiency of 33.1 % is determined at 150 GHz with an input power of 2.3 W. The fabricated 300 GHz doubler delivers pulsed output power that is greater than 110 mW from 292 GHz to 305 GHz with an efficiency of 11.3 % to 14.7 %. A peak output power of 183.4 mW with 13.9 % efficiency is obtained at 302 GHz.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2021.3110781</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodes ; Chains ; Efficiency ; Electrons ; frequency doubler ; Frequency measurement ; GaN ; high power ; Power amplifiers ; Power generation ; Radar imaging ; Schottky barrier diodes ; Schottky diodes ; Solid state ; THz ; Wireless communication</subject><ispartof>IEEE electron device letters, 2021-11, Vol.42 (11), p.1588-1591</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3</citedby><cites>FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3</cites><orcidid>0000-0001-6939-4237 ; 0000-0002-9207-8344 ; 0000-0003-4336-3373 ; 0000-0001-7275-8388</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9530519$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Zhang, Lisen</creatorcontrib><creatorcontrib>Liang, Shixiong</creatorcontrib><creatorcontrib>Lv, Yuanjie</creatorcontrib><creatorcontrib>Yang, Dabao</creatorcontrib><creatorcontrib>Fu, Xingchang</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Gu, Guodong</creatorcontrib><creatorcontrib>Xu, Peng</creatorcontrib><creatorcontrib>Guo, Yanmin</creatorcontrib><creatorcontrib>Bu, Aimin</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><title>High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of 1322 mW with 27 % efficiency is derived, while a peak efficiency of 33.1 % is determined at 150 GHz with an input power of 2.3 W. The fabricated 300 GHz doubler delivers pulsed output power that is greater than 110 mW from 292 GHz to 305 GHz with an efficiency of 11.3 % to 14.7 %. A peak output power of 183.4 mW with 13.9 % efficiency is obtained at 302 GHz.</description><subject>Anodes</subject><subject>Chains</subject><subject>Efficiency</subject><subject>Electrons</subject><subject>frequency doubler</subject><subject>Frequency measurement</subject><subject>GaN</subject><subject>high power</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Radar imaging</subject><subject>Schottky barrier diodes</subject><subject>Schottky diodes</subject><subject>Solid state</subject><subject>THz</subject><subject>Wireless communication</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLw0AQhRdRsFbvgpcFz6kzmUyye6y1tkJRoXpeNsnGptSm7raI_nq3tHiaGea9ecMnxDXCABH03Wz8MEghxQHFsVB4InrIrBLgnE5FD4oME0LIz8VFCEsAzLIi64nhtP1YJK_dt_OSAORk-ivn3aqtk_nWbl3sd75ycrSw7Vre2-Bq2a3lxD7Lh25XrpwPl-Kssavgro61L94fx2-jaTJ7mTyNhrOkIlLbxDWKWaOuMuYirygjoKJgTEtVc5lzxo0inRNUqsESwOVsKS3R2jru6ob64vZwd-O7r50LW7OMv61jpElZ5awBdRpVcFBVvgvBu8ZsfPtp_Y9BMHtQJoIye1DmCCpabg6W1jn3L9dMwKjpD9D2X6g</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Zhang, Lisen</creator><creator>Liang, Shixiong</creator><creator>Lv, Yuanjie</creator><creator>Yang, Dabao</creator><creator>Fu, Xingchang</creator><creator>Song, Xubo</creator><creator>Gu, Guodong</creator><creator>Xu, Peng</creator><creator>Guo, Yanmin</creator><creator>Bu, Aimin</creator><creator>Feng, Zhihong</creator><creator>Cai, Shujun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0002-9207-8344</orcidid><orcidid>https://orcid.org/0000-0003-4336-3373</orcidid><orcidid>https://orcid.org/0000-0001-7275-8388</orcidid></search><sort><creationdate>20211101</creationdate><title>High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers</title><author>Zhang, Lisen ; Liang, Shixiong ; Lv, Yuanjie ; Yang, Dabao ; Fu, Xingchang ; Song, Xubo ; Gu, Guodong ; Xu, Peng ; Guo, Yanmin ; Bu, Aimin ; Feng, Zhihong ; Cai, Shujun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Anodes</topic><topic>Chains</topic><topic>Efficiency</topic><topic>Electrons</topic><topic>frequency doubler</topic><topic>Frequency measurement</topic><topic>GaN</topic><topic>high power</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Radar imaging</topic><topic>Schottky barrier diodes</topic><topic>Schottky diodes</topic><topic>Solid state</topic><topic>THz</topic><topic>Wireless communication</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Lisen</creatorcontrib><creatorcontrib>Liang, Shixiong</creatorcontrib><creatorcontrib>Lv, Yuanjie</creatorcontrib><creatorcontrib>Yang, Dabao</creatorcontrib><creatorcontrib>Fu, Xingchang</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Gu, Guodong</creatorcontrib><creatorcontrib>Xu, Peng</creatorcontrib><creatorcontrib>Guo, Yanmin</creatorcontrib><creatorcontrib>Bu, Aimin</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Lisen</au><au>Liang, Shixiong</au><au>Lv, Yuanjie</au><au>Yang, Dabao</au><au>Fu, Xingchang</au><au>Song, Xubo</au><au>Gu, Guodong</au><au>Xu, Peng</au><au>Guo, Yanmin</au><au>Bu, Aimin</au><au>Feng, Zhihong</au><au>Cai, Shujun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2021-11-01</date><risdate>2021</risdate><volume>42</volume><issue>11</issue><spage>1588</spage><epage>1591</epage><pages>1588-1591</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A high-power 300 GHz solid-state source chain based on GaN doublers is proposed. The two doublers working at 150 GHz and 300 GHz are designed and fabricated. The pulsed output power exceeds 1000 mW at 148 GHz to 152.5 GHz with an efficiency of 21 % to 29 %. At 151 GHz, a peak pulsed output power of 1322 mW with 27 % efficiency is derived, while a peak efficiency of 33.1 % is determined at 150 GHz with an input power of 2.3 W. The fabricated 300 GHz doubler delivers pulsed output power that is greater than 110 mW from 292 GHz to 305 GHz with an efficiency of 11.3 % to 14.7 %. A peak output power of 183.4 mW with 13.9 % efficiency is obtained at 302 GHz.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2021.3110781</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0002-9207-8344</orcidid><orcidid>https://orcid.org/0000-0003-4336-3373</orcidid><orcidid>https://orcid.org/0000-0001-7275-8388</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2021-11, Vol.42 (11), p.1588-1591
issn 0741-3106
1558-0563
language eng
recordid cdi_proquest_journals_2586590192
source IEEE Xplore (Online service)
subjects Anodes
Chains
Efficiency
Electrons
frequency doubler
Frequency measurement
GaN
high power
Power amplifiers
Power generation
Radar imaging
Schottky barrier diodes
Schottky diodes
Solid state
THz
Wireless communication
title High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T20%3A56%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Power%20300%20GHz%20Solid-State%20Source%20Chain%20Based%20on%20GaN%20Doublers&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Zhang,%20Lisen&rft.date=2021-11-01&rft.volume=42&rft.issue=11&rft.spage=1588&rft.epage=1591&rft.pages=1588-1591&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2021.3110781&rft_dat=%3Cproquest_cross%3E2586590192%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c338t-ef855919c45576c3430377512b8d5b6545f839630c8f1b00e65a32b1aad545df3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2586590192&rft_id=info:pmid/&rft_ieee_id=9530519&rfr_iscdi=true