Dielectric permittivity in weakly concentrated SrTiO3:Mn crystals and ceramics

• Published in: Journal of physics. Conference series 2007-12, Vol.93 (1), p.012017
• Main Authors: Trepakov, V A, Savinov, M, Železný, V, Pokorný, J, Syrnikov, P, Azzoni, C B, Galinetto, P, Mozzati, M C, Badalyan, A, Deyneka, A, Jastrabik, L
• Format: Article
• Language: English
• Subjects: Ceramics; Crystal defects; Dielectric loss; Dielectric relaxation; Dielectric strength; Inhomogeneity; Low temperature; Permittivity; Physics; Raman spectra; Reflectance; Strontium titanates; Temperature
• ISSN: 1742-6596; 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/93/1/012017

Dielectric permittivity ϵ + iϵ′′ (100 Hz – 1 MHz) supplemented by IR (20 – 650 cm−1) reflectivity and Micro-Raman spectra studies were performed on weakly concentrated SrTiO3:Mn (0.1%) crystals and ceramics sintered with deficit of Ti, keeping the ratio (Ti+Mn)/Sr 1. Surprisingly, magnitude of permittivity in SrTiO3:Mn crystals appeared to be depressed at low temperatures as in ceramics, reaching only ∼3000 at T 10 K. At the same time, low temperature IR reflectivity in STO:Mn crystals evidences that TO phonons contribution into low-frequency permittivity is nearly the same as in undoped serial SrTiO3 quantum paraelectric crystals. Together with Micro-Raman data, such features are understood as evidences of STO:Mn(0.1%) crystals inhomogeneity and presence of Mn oxides enriched nano-regions. Currently discussed in literature Mn doping related low-temperature dielectric relaxation is faintly pronounced in dielectric losses of STO:Mn(0.1%) crystals and ceramics and increased in reduced crystals, where at least two relaxation contributions with activation energy ∼40 meV and ∼120 meV can be distinguished displaying at ∼20 – 40 K and 76-114 K temperature regions respectively. The fist relaxation is attributed to reorientation of polaronic defects localized on Mn2+ related centres. Possible nature of the second one is discussed.