Effect of Mechanical Stress on the Splitting of Spin Sublevels in 4H-SiC

The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerface of the AlN/4H-SiC structure has been studied. Stresses near the heterointerface have been...

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Bibliographic Details
Published in:JETP letters 2021-09, Vol.114 (5), p.274-278
Main Authors: Breev, I. D., Likhachev, K. V., Yakovleva, V. V., Veishtort, I. P., Skomorokhov, A. M., Nagalyuk, S. S., Mokhov, E. N., Astakhov, G. V., Baranov, P. G., Anisimov, A. N.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Color centers
Condensed Matter
Magnetic resonance
Molecular
Nanocrystals
Nanosensors
Optical and Plasma Physics
Parameters
Particle and Nuclear Physics
Physics
Physics and Astronomy
Piezoelectricity
Quantum Information Technology
Raman spectra
Raman spectroscopy
Room temperature
Silicon carbide
Solid State Physics
Spintronics
Splitting
Strain
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Summary:The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerface of the AlN/4H-SiC structure has been studied. Stresses near the heterointerface have been determined using confocal Raman spectroscopy. The spin–strain coupling constants GHz/strain and GHz/strain for the V2 center in 4H-SiC have been experimentally determined for the first time using the optically detected magnetic resonance method. The results obtained can be used to control spin states in SiC by means of the controlled piezoelectric strain in AlN and to estimate the fine-structure parameter D of spin centers using Raman scattering. Such an estimate makes it possible to forecast magnetometric parameters of nanosensors based on SiC nanocrystals.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364021170057