Nitrogen ion induced CdS clusterization: Structural, morphological, and optoelectrical properties

• Published in: Journal of alloys and compounds 2021-12, Vol.888, p.161604, Article 161604
• Main Authors: Khatter, Jaya, Chauhan, R.P.
• Format: Article
• Language: English
• Subjects: Cadmium sulfide; Electrical properties; Electronic devices; Emission spectra; Glass substrates; Hexagonal phase; Ion implantation; Morphological; Nitrogen implantation; Nitrogen ions; Optical properties; Optoelectrical properties; Thin films
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2021.161604

•80 keV N+ ion beam implanted on chemical deposited CdS thin films.•Wurtzite phase of CdS films remains consistent after nitrogen ion implantation.•Defect clusterization is clearly visualized at higher fluence.•Optical band gap reduces with increase in implantation dose.•Electric current is increased owing to implantation induced vacancies, carrier concentration, and the grain growth mechanism. [Display omitted] Semiconducting nanostructures are unique system to study the nanoscale phenomenon for diverse applications in new generation electronic devices. Ion implantation is a promising approach for producing nanoscale crystals or clusters in the near-surface region for doping of semiconductors which repair the respective optical and electrical properties. In the present study, cadmium sulfide (CdS) thin films are grown on a glass substrate via an easy and economical chemical bath deposition method. Thereafter, CdS thin films are implanted with 80 keV nitrogen (N+) ions with different fluences. Implanted thin films are characterized with the support of various characterization techniques. X-ray diffraction (XRD) analysis indicates that the hexagonal phase of CdS nanoflakes remains consistent while scanning electron microscopy (SEM) imaging reveals the formation of defect clusterization after implantation. The defect clusterization in CdS thin films is explained on the basis of local heating after the transmission of implantation energy. Optical properties such as absorption and emission spectra of implanted CdS thin films also get affected on the account of the generation of donor and acceptor level owing to Cd and S vacancies. Furthermore, a considerable increase in the magnitude of the electric current is observed as compared to the pristine sample with the implantation dose.