Influence of Finishing the Surface of GaAs on the Properties of Au–GaAs Interfaces

— The GaAs surface is under investigation depending on the methods of preepitaxial processing. It is shown that the known methods of surface treatment using acid or alkaline etchants with subsequent annealing in a vacuum chamber lead to different results in terms of the composition of the near-surfa...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2021-11, Vol.66 (11), p.1289-1295
Main Authors: Bryantseva, T. A., Gulyaev, Yu. V., Lyubchenko, V. E., Markov, I. A., Ten, Yu. A.
Format: Article
Language:English
Subjects:
Analysis
Annealing
Chemical properties
Communications Engineering
Deionization
Engineering
Etchants
Gallium arsenide
Nanoelectronics
Networks
Reagents
Recrystallization
Surface layers
Surface treatment
Vacuum chambers
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Summary:— The GaAs surface is under investigation depending on the methods of preepitaxial processing. It is shown that the known methods of surface treatment using acid or alkaline etchants with subsequent annealing in a vacuum chamber lead to different results in terms of the composition of the near-surface layer. It is found that the physical and chemical properties of water at the stage of neutralization of the etching solution play an important role in the finish washing of GaAs. Moreover, from the remaining drops on the surface of GaAs during the drying stage either a thin layer of GaAs oxide (when using deionized water), or a layer of recrystallized GaAs (when using reagent-free modified water) can precipitate.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226921110012