Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperatur...

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Bibliographic Details
Published in:Electronics (Basel) 2021-11, Vol.10 (22), p.2816
Main Authors: García, Héctor, Boo, Jonathan, Vinuesa, Guillermo, G. Ossorio, Óscar, Sahelices, Benjamín, Dueñas, Salvador, Castán, Helena, González, Mireia B., Campabadal, Francesca
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Compliance
Electrical properties
Electrodes
Electroforming
Energy
Hafnium oxide
Hopping conduction
Liquid nitrogen
Low resistance
Low temperature
Ohmic dissipation
Positive feedback
Resistance heating
Room temperature
Switching
Temperature
Titanium
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Summary:In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics10222816