Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

• Published in: Electronics (Basel) 2021-11, Vol.10 (22), p.2816
• Main Authors: García, Héctor, Boo, Jonathan, Vinuesa, Guillermo, G. Ossorio, Óscar, Sahelices, Benjamín, Dueñas, Salvador, Castán, Helena, González, Mireia B., Campabadal, Francesca
• Format: Article
• Language: English
• Subjects: Atomic layer epitaxy; Compliance; Electrical properties; Electrodes; Electroforming; Energy; Hafnium oxide; Hopping conduction; Liquid nitrogen; Low resistance; Low temperature; Ohmic dissipation; Positive feedback; Resistance heating; Room temperature; Switching; Temperature; Titanium
• ISSN: 2079-9292; 2079-9292
• DOI: 10.3390/electronics10222816

In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.