Phonon-Assisted Tunneling Current in a Double-Barrier Heterostructure with a Quantum Well

Based on a quantum-mechanical model with a non-Hermitian Hamiltonian, we theoretically describe the tunneling current in a heterostructure containing a quantum well. We pay special attention to the effect of inelastic electron scattering by optical phonons in the tunneling process. We demonstrate th...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Russian laser research 2021-11, Vol.42 (6), p.632-642
Main Authors: Shchurova, Ljudmila Yu, Murzin, Vladimir N.
Format: Article
Language:English
Subjects:
Electric fields
Heterostructures
Inelastic scattering
Lasers
Microwaves
Optical Devices
Optics
Phonons
Photonics
Physics
Physics and Astronomy
Quantum wells
Resonant tunneling
RF and Optical Engineering
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Based on a quantum-mechanical model with a non-Hermitian Hamiltonian, we theoretically describe the tunneling current in a heterostructure containing a quantum well. We pay special attention to the effect of inelastic electron scattering by optical phonons in the tunneling process. We demonstrate that, in the case of a heterostructure of the composition In 0 . 53 Ga 0 . 47 As/AlAs/InP, the dependences of the tunneling current on the applied electric field reveals a peak associated with the resonant tunneling and a smaller postresonant peak induced by the LO-phonon-assisted tunneling.
ISSN:1071-2836
1573-8760
DOI:10.1007/s10946-021-10002-5