On Dielectric Screening in Twisted Double Bilayer Graphene

We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements, quantum oscillations of magnetoresistance originating from tw...

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Bibliographic Details
Published in:Journal of the Physical Society of Japan 2021-12, Vol.90 (12), p.1
Main Authors: Mukai, Fumiya, Horii, Kota, Hata, Nazuna, Ebisuoka, Ryoya, Watanabe, Kenji, Taniguchi, Takashi, Yagi, Ryuta
Format: Article
Language:English
Subjects:
Bilayers
Carrier density
Density ratio
Electric fields
Graphene
Low temperature
Magnetoresistance
Magnetoresistivity
Screening
Wave functions
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Summary:We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements, quantum oscillations of magnetoresistance originating from two bands with different carrier density were observed. The behavior of the carrier densities with respect to the total carrier density was distinct from that of the AB-stacked tetralayer graphene. The carrier density ratio was theoretically analyzed in terms of the model that the induced charge decays exponentially with distance with a screening length λ. The estimated λ was slightly larger than that of AB-stacked graphene, which would possibly reflect the difference in the inter-plane distribution of probability of the wave function.
ISSN:0031-9015
1347-4073
DOI:10.7566/JPSJ.90.124702